TPCP8010 - Silicon N-Channel MOSFET

Product Overview

Toshiba Semiconductor

Part number	TPCP8010
Manufacturer	Toshiba Semiconductor
File Size	266.46 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPCP8010 Datasheet
Additional preview pages of the TPCP8010 datasheet.

(1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.9 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 19.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8010 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-12 2016-02-23 Rev.5.0 TPCP8010 4. Absolute Maximum Ratin.

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Published: Aug 27, 2014 |