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TPCP8103-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII)
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TPCP8103-H
High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
• • • • • • • Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 6.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 31 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = -40V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA)
1．Source 2．Source 3．Source 4．Gate 5．Drain 6．Drain 7．Drain 8．Drain
S
Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.475
1 4
0.65 2.9±0.1
B A
0.05 M B
0.8±0.05 0.025
S
0.17±0.02
0.28 +0.1 -0.
TPCP8103-H Datasheet
