TPCP8105 - MOSFETs

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Toshiba Semiconductor

Part number	TPCP8105
Manufacturer	Toshiba Semiconductor
File Size	226.37 KB
Description	MOSFETs
Datasheet	TPCP8105 Datasheet
Additional preview pages of the TPCP8105 datasheet.

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain PS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipati.

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Published: Aug 27, 2014 |