TPCP8103-H
Key Features
- Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 6.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 31 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = -40V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA)
