The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
TPCP8505
TPCP8505
High-Speed Switching Applications DC-DC Converter Applications
• High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.)
0.33±0.05
0.05 M A
8
5
Unit: mm
2.4±0.1 2.8±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEX
80
V
VCEO
50
Emitter-base voltage
VEBO
7
V
DC (Note 1)
IC
Collector current
Pulse (Note 1)
ICP
3.0 A
5.0
Base current
IB
0.3
A
Collector power dissipation (t = 10 s)
t = 10s DC
3.0 PC (Note 2)
1.
TPCP8505 Datasheet
