TPCP8507
TOSHIBA Transistor Silicon NPN Epitaxial Type
High-Speed Switching Applications DC-DC Converters
Unit: mm
- High DC current gain : h FE = 120 to 300 (IC = 0.1 A)
- Low collector-emitter saturation voltage : VCE(sat) = 0.14 V (max)
- High-speed switching : tf = 0.2 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
Collector-emitter voltage
VCEX
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
DC (Note 1)
Collector current
Pulsed (Note 1)
Base current
Collector power dissipation t = 10 s DC
PC (Note 2)
3.00 1.25
Junction temperature
Tj
°C
Storage temperature...
