TPCP8505
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
High-Speed Switching Applications DC-DC Converter Applications
- High DC current gain: h FE = 400 to 1000 (IC = 0.3 A)
- Low collector-emitter saturation: VCE (sat) = 0.14 V (max)
- High-speed switching: tf = 120 ns (typ.)
0.33±0.05
0.05 M A
Unit: mm
2.4±0.1 2.8±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
Collector-emitter voltage
VCEX
VCEO
Emitter-base voltage
VEBO
DC (Note 1)
Collector current
Pulse (Note 1)
3.0 A
Base current
Collector power dissipation (t = 10 s) t = 10s DC
3.0 PC (Note 2)
Junction temperature Storage temperature...
