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TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8507
High-Speed Switching Applications DC-DC Converters
TPCP8507
Unit: mm
• High DC current gain : hFE = 120 to 300 (IC = 0.1 A) • Low collector-emitter saturation voltage : VCE(sat) = 0.14 V (max) • High-speed switching : tf = 0.2 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
180
V
Collector-emitter voltage
VCEX
150
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
7
V
DC (Note 1)
IC
Collector current
Pulsed (Note 1)
ICP
1.0
A
2.0
A
Base current
IB
0.1
A
Collector power dissipation
t = 10 s DC
PC (Note 2)
3.00 1.
TPCP8507 Datasheet
