TPD1032F Key Features
- Two built-in power IC chips with a new structure bining a control block and a vertical power MOSFET (L2-π-MOS) on each c
- Can directly drive a power load from a CMOS or TTL logic
- Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (cu
- Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C)
- Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 20 V, Tch = 25°C)
- Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40～110°C)
- 8-pin SOP package for surface with embossed-tape packing