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TTA0001 - Silicon PNP Transistor

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Part number TTA0001
Manufacturer Toshiba
File Size 161.30 KB
Description Silicon PNP Transistor
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TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications • High collector voltage: VCEO = －160 V (min.) • Complementary to TTC0001 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. TTA0001 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse VCBO VCEO VEBO IC ICP IB PC Tj Tstg -160 V -160 V -5 V -18 A -35 A -9 A 150 W 150 °C −55 to 150 °C 1.BASE 2.COLLECTOR(HEAT SINK) 3.EMITTER JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight : 4.7 g (typ.) Note: Using continuously under heavy loads (e.g.
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