900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Transphorm

TP65H300G4LSG Datasheet Preview

TP65H300G4LSG Datasheet

GaN FET

No Preview Available !

TP65H300G4LSG
650V SuperGaN™ GaN FET in PQFN (source tab)
Preliminary Datasheet
Description
The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride
(SuperGaN™) FET is a normally-off device. It combines state-
of-the-art high voltage GaN HEMT and low voltage silicon
MOSFET technologiesoffering superior reliability and
performance.
SuperGaN is Transphorm’s latest GaN platform, which uses
advanced epi and patented design technologies to reduce
cost through simplified manufacturability while improving
efficiency over silicon via lower gate charge, output
capacitance, crossover loss, and reverse recovery charge.
Related Literature
AN0009: Recommended External Circuitry for GaN FETs
AN0003: Printed Circuit Board Layout and Probing
AN0010: Paralleling GaN FETs
Product Series and Ordering Information
Part Number
Package
Package
Configuration
TP65H300G4LSG-TR 8x8mm PQFN
Source
* Add “-TR” suffix for tape and reel
TP65H300G4LSG
PQFN
(top view)
S
D
G
Features
Gen IV technology
JEDEC-qualified GaN technology
Dynamic RDS(on) production tested
Robust design, defined by
Intrinsic lifetime tests
Wide gate safety margin
Transient over-voltage capability
Very low QRR
Reduced crossover loss
Benefits
Enables AC-DC bridgeless totem-pole PFC designs
Increased power density
Reduced system size and weight
Overall lower system cost
Achieves increased efficiency in both hard- and soft-
switched circuits
Easy to drive with commonly-used gate drivers
GSD pin layout improves high speed design
Applications
Datacom
Broad industrial
PV inverter
Servo motor
Key Specifications
VDS (V) min
V(TR)DSS (V) max
650
720
RDS(on) (mΩ) max*
288
QRR (nC) typ
23
QG (nC) typ
7
* Dynamic RDS(on); see Figures 19 and 20
Cascode Schematic Symbol
August 20, 2019
tp65h300g4lsg.1
Cascode Device Structure
© 2019 Transphorm Inc. Subject to change without notice.
1




Transphorm

TP65H300G4LSG Datasheet Preview

TP65H300G4LSG Datasheet

GaN FET

No Preview Available !

TP65H300G4LSGPreliminary
Absolute Maximum Ratings (Tc=25°C unless otherwise stated.)
Symbol
VDSS
V(TR)DSS
VGSS
PD
ID
IDM
TC
TJ
TS
TSOLD
Parameter
Drain to source voltage (TJ = -55°C to 150°C)
Transient drain to source voltage a
Gate to source voltage
Maximum power dissipation @TC=25°C
Continuous drain current @TC=25°C b
Continuous drain current @TC=100°C b
Pulsed drain current (pulse width: 10µs)
Operating temperature
Case
Junction
Storage temperature
Soldering peak temperature c
Limit Value
Unit
650
720
V
±18
21
W
6.5
A
4.1
A
30
A
-55 to +150
°C
-55 to +150
°C
-55 to +150
°C
260
°C
Notes:
a. In off-state, spike duty cycle D<0.01, spike duration <1µs
b. For increased stability at high current operation, see Circuit Implementation on page 3
c. For 10 sec., 1.6mm from the case
Thermal Resistance
Symbol
Parameter
Maximum
Unit
RΘJC
Junction-to-case
6
°C/W
RΘJA
Junction-to-ambient e
50
°C/W
Notes:
e. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm2 copper area and 70µm thickness)
August 20, 2019
tp65h300g4lsg.1
transphormusa.com
2



Part Number TP65H300G4LSG
Description GaN FET
Maker Transphorm
Total Page 3 Pages
PDF Download

TP65H300G4LSG Datasheet PDF





Similar Datasheet

1 TP65H300G4LSG GaN FET
Transphorm





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy