TP65H300G4LSG Datasheet GaN FET

Manufacturer: Transphorm

TP65H300G4LSG gan fet by Transphorm - Datasheet Preview

Datasheet Details

Part number	TP65H300G4LSG
Manufacturer	Transphorm
File Size	1.32 MB
Description	GaN FET
Datasheet	TP65H300G4LSG Datasheet

General Description

The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device.

It combines stateof-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

SuperGaN is Transphorm’s latest GaN platform, which uses advanced epi and patented design technologies to reduce cost through simplified manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Overview

TP65H300G4LSG 650V SuperGaN™ GaN FET in PQFN (source tab) Preliminary.

Key Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on) production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves increased effici.

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