TP65H300G4LSG
Description
The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. It bines stateof-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies-offering superior reliability and performance.
Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on) production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss Benefits
- Enables AC-DC bridgeless totem-pole PFC designs
