TP65H300G4JSGB
TP65H300G4JSGB is 650V GaN FET manufactured by Renesas.
Description
The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (Ga N) FET is a normally-off device using Renesas’s Gen IV platform. It bines a state-ofthe-art high voltage Ga N HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Related Literature
- Printed Circuit Board Layout and Probing
- Remendations for Vapor Phase Reflow
- Remended External Circuitry for Ga N FETs
- PQFN Tape and Reel Information
- Low cost driver solution
Product Series and Ordering Information
Part Number
Package
Package
Configuration
TP65H300G4JSGB-TR- 5x6 PQFN
Source
- “-TR” suffix refers to tape and reel. Refer to AN0012 for details.
TP65H300G4JSGB PQFN
(top view)
Pin 5
Pin 8
Pin 4
Pin 9 Pin 1
Features
- Gen IV technology
- JEDEC-qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- Ro HS pliant and Halogen-free packaging
Benefits
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with monly-used gate drivers
- GSD pin layout improves high speed...
