TP65H300G4JSGB Overview
The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It bines a state-ofthe-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge,...
TP65H300G4JSGB Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS pliant and Halogen-free packaging
- Achieves increased efficiency in both hard- and soft-switched circuits