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TP65H300G4LSG - GaN FET

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TP65H300G4LSG GaN FET by Transphorm - Datasheet Preview — Datasheet preview – TP65H300G4LSG

Datasheet Details

Part number	TP65H300G4LSG
Manufacturer	Transphorm
File Size	1.32 MB
Description	GaN FET
Datasheet	TP65H300G4LSG Datasheet
Additional preview pages of the TP65H300G4LSG datasheet.

Product details

Description

The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. offering superior reliability and performance.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on) production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves increased effici.

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Published: Aug 10, 2020 |