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TP65H300G4LSG - GaN FET

General Description

The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device.

offering superior reliability and performance.

Key Features

  • Gen IV technology.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on) production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss Benefits.
  • Enables AC-DC bridgeless totem-pole PFC designs.
  • Increased power density.
  • Reduced system size and weight.
  • Overall lower system cost.
  • Achieves increased effici.

📥 Download Datasheet

Datasheet Details

Part number TP65H300G4LSG
Manufacturer Transphorm
File Size 1.32 MB
Description GaN FET
Datasheet download datasheet TP65H300G4LSG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP65H300G4LSG 650V SuperGaN™ GaN FET in PQFN (source tab) Preliminary Datasheet Description The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. It combines stateof-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. SuperGaN is Transphorm’s latest GaN platform, which uses advanced epi and patented design technologies to reduce cost through simplified manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.