TP65H300G4LSG Overview
The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. It bines stateof-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies offering superior reliability and performance. SuperGaN is Transphorm’s latest GaN platform, which uses advanced epi and patented design technologies to reduce cost through simplified manufacturability while improving efficiency over...
TP65H300G4LSG Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on) production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- Enables AC-DC bridgeless totem-pole PFC designs
