TP65H300G4LSG
TP65H300G4LSG is GaN FET manufactured by Transphorm.
Description
The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (Super Ga N™) FET is a normally-off device. It bines stateof-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance.
Super Ga N is Transphorm’s latest Ga N platform, which uses advanced epi and patented design technologies to reduce cost through simplified manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Related Literature
- AN0009: Remended External Circuitry for Ga N FETs
- AN0003: Printed Circuit Board Layout and Probing
- AN0010: Paralleling Ga N FETs
Product Series and Ordering Information
Part Number
Package
Package Configuration
TP65H300G4LSG-TR 8x8mm PQFN
Source
- Add “-TR” suffix for tape and reel
TP65H300G4LSG PQFN
(top view)
Features
- Gen IV technology
- JEDEC-qualified Ga N technology
- Dynamic RDS(on) production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
Benefits
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and softswitched circuits
- Easy to drive with monly-used gate drivers
- GSD pin layout improves high speed design
Applications
- Data
- Broad industrial
- PV inverter
- Servo...
