Transphorm TP65H300G4LSG
The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. It combines stateof-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.| Part No. | TP65H300G4LSG |
|---|---|
| Datasheet | TP65H300G4LSG Download |
| Manufacturer | Transphorm |
| Description | GaN FET |
| Buy | Stock & Price |
DESCRIPTION
SuperGaN is Transphorm’s latest GaN platform, which uses advanced epi and patented design technologies to reduce cost through simplified manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Related Literature● AN0009: Recommended External Circuitry for GaN FETs
● AN0003: Printed Circuit Board Layout and Probing
● AN0010: Paralleling GaN FETs Product Series and Ordering Information Part Number Package Package Configuration TP65H300G4LSG-TR 8x8mm PQFN Source * Add “-TR” suffix for tape and reel TP65H300G4LSG PQFN (top view) S D G
FEATURES
● Gen IV technology● JEDEC-qualified GaN technology
● Dynamic RDS(on) production tested
● Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability
● Very low QRR
● Reduced crossover loss Benefits
● Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system siz...
