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TP65H300G4LSG - 650V SuperGaN FET

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Renesas

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TP65H300G4LSG 650V SuperGaN FET by Renesas - Datasheet Preview — Datasheet preview – TP65H300G4LSG

Datasheet Details

Part number	TP65H300G4LSG
Manufacturer	Renesas
File Size	925.66 KB
Description	650V SuperGaN FET
Datasheet	TP65H300G4LSG Datasheet
Additional preview pages of the TP65H300G4LSG datasheet.

Product details

Features

JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Enhanced inrush current capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achiev.

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Published: Jan 30, 2025 |