TP65H300G4LSG
TP65H300G4LSG is 650V SuperGaN FET manufactured by Renesas.
Features
- JEDEC-qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss
Benefits
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with monly-used gate drivers
- GSD pin layout improves high speed design
Applications
- Consumer
- Power adapters
- Low power SMPS
- Lighting
Key Specifications
VDSS (V) VDSS(TR) (V)
650 800
RDS(on) (mΩ) max-
QRR (n C) typ
QG (n C) typ
- Dynamic R ; DS(on) see Figures 18 and 19
Cascode Schematic Symbol Cascode Device Structure
TP65H300G4LSG.2v5 Aug 13, 2024
Page 1 © 2024 Renesas Electronics
TP65H300G4LSG Datasheet
Absolute Maximum Ratings (Tc=25°C unless otherwise stated.)
Symbol VDSS
VDSS (TR) VGSS...
