TP65H300G4LSG Description
Specifications in this document are tentative and subject to change Datasheet TP65H300G4LSG 650V SuperGaN® FET in PQFN (source tab) PDereslcimripintaioryn Datasheet The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It bines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen...
TP65H300G4LSG Key Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss
- Enables AC-DC bridgeless totem-pole PFC designs