Renesas Electronics TP65H300G4LSGB
The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-ofthe-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.| Part No. | TP65H300G4LSGB |
|---|---|
| Datasheet | TP65H300G4LSGB Download |
| Manufacturer |  Renesas Electronics |
| Description | 650V SuperGaN GaN FET |
| Buy | Stock & Price |
FEATURES
● Gen IV technology● JEDEC-qualified GaN technology
● Dynamic RDS(on)eff production tested
● Robust design, defined by — Wide gate safety margin — Transient over-voltage capability
● Very low QRR
● Reduced crossover loss
● RoHS compliant and Halogen-free packaging Benefits
● Achieves increased efficiency in both hard- and soft-switched circuits — Increased power density — Reduced system size and weight — Overall lower system cost
● Easy to drive with commonly-used gate drivers
● GSD pin layout improves high speed design
APPLICATIONS
● Consumer● Power adapters
● Low power SMPS
● Lighting Key Specifications VDS (V) min VDSS(TR) (V) max RDS(on) (mΩ) max* 650 800 312 QRR (nC) typ 23 QG (nC) typ 9.6 * Dynamic R ; DS(on) see Figures 18 and 19 TP65H300G4LSGB.1v1 Oct 23, 2023Oct 3, 2024 Page 1 © 2024 Renesas Electronics TP65H300G4LSGB Datasheet
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C unless otherwise stated.) Symbol VDSS VDSS(TR) VGSS PD ID IDM TC TJ TS TSOLD Parameter Drain to source vol...
