TP65H300G4LSGB
TP65H300G4LSGB is 650V SuperGaN GaN FET manufactured by Renesas.
Features
- Gen IV technology
- JEDEC-qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- Ro HS pliant and Halogen-free packaging
Benefits
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with monly-used gate drivers
- GSD pin layout improves high speed design
Applications
- Consumer
- Power adapters
- Low power SMPS
- Lighting
Key Specifications
VDS (V) min VDSS(TR) (V) max RDS(on) (mΩ) max-
650 800 312
QRR (n C) typ
QG (n C) typ
- Dynamic R ; DS(on) see Figures 18 and 19
TP65H300G4LSGB.1v1 Oct 23, 2023Oct 3, 2024
Page 1 © 2024 Renesas Electronics
TP65H300G4LSGB Datasheet
Absolute Maximum Ratings (Tc=25°C unless otherwise stated.)
Symbol VDSS
VDSS(TR) VGSS PD
IDM TC TJ TS TSOLD
Parameter
Drain to source voltage (TJ = -55°C to...
