Datasheet Details
| Part number | TP90H180PS |
|---|---|
| Manufacturer | Transphorm |
| File Size | 1.27 MB |
| Description | 900V GaN FET |
| Download | TP90H180PS Download (PDF) |
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| Part number | TP90H180PS |
|---|---|
| Manufacturer | Transphorm |
| File Size | 1.27 MB |
| Description | 900V GaN FET |
| Download | TP90H180PS Download (PDF) |
|
|
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The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
TP90H180PS 900V GaN FET in TO-220 (source tab).
| Part Number | Description |
|---|---|
| TP90H050WS | 900V GaN FET |