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TP65H035G4QS 650V SuperGaN® FET in TOLL (source tab) Preliminary Datasheet Description The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a n

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TPH3006PS PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) () 0.15 Qrr (nC) 54 Features  Low Qrr  Free-wheeling diode not required  Low-side

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600V Cascode GaN FET in TO-247 (source tab) TPH3205WS Not recommended for new designs—see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium ni

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TPH3208PS 650V GaN FET TO-220 Series Description The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-

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650V GaN FET in TO-247 (source tab) TPH3207WS Not recommended for new designs—see TP65H035WS Description The TPH3207WS 650V, 35mΩ Gallium Nitride (G

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TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary Description The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off d

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TP65H050WS 650V GaN FET in TO-247 (source tab) Description The TP65H050WS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines

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TPH3212PS 650V GaN FET in TO-220 (source tab) Description The TPH3212PS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines s

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TPH3202P Series—Discontinued 600V GaN FET TO-220 Series Description The TPH3202P Series 600V, 290mΩ Gallium Nitride (GaN) FETs are normally-off devi

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TP65H035WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab) Description The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-

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TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It c

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TPH3208P Series 650V GaN FET TO-220 Series Description The TPH3208P Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They com

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TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It c

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TP65H035G4WS 650V SuperGaN™ FET in TO-247 (source tab) Description The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device u

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TP65H050BS 650V GaN FET in TO-263 (source tab) Preliminary Datasheet Description The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-

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600V Cascode GaN FET in TO-220 (source tab) TPH3206PS Not recommended for new designs—see TPH3206PSB Description The TPH3206PS 600V, 150mΩ gallium n

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TPH3006PD PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) () 0.15 Qrr (nC) 54 Features  Low Qrr  Free-wheeling diode not required  High-side

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TP65H035WS 650V GaN FET in TO-247 (source tab) Description The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines

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