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TPH3006PD PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) () 0.15 Qrr (nC) 54 Features  Low Qrr  Free-wheeling diode not required  High-side

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TP65H035WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab) Description The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-

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TPH3006PS PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) () 0.15 Qrr (nC) 54 Features  Low Qrr  Free-wheeling diode not required  Low-side

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TP65H035G4QS 650V SuperGaN® FET in TOLL (source tab) Preliminary Datasheet Description The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a n

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TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary Description The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off d

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TP65H050WS 650V GaN FET in TO-247 (source tab) Description The TP65H050WS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines

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TP65H035WS 650V GaN FET in TO-247 (source tab) Description The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines

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TP65H050BS 650V GaN FET in TO-263 (source tab) Preliminary Datasheet Description The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-

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TP65H035G4WS 650V SuperGaN™ FET in TO-247 (source tab) Description The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device u

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650V GaN FET in TO-247 (source tab) TPH3207WS Not recommended for new designs—see TP65H035WS Description The TPH3207WS 650V, 35mΩ Gallium Nitride (G

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600V Cascode GaN FET in TO-247 (source tab) TPH3205WS Not recommended for new designs—see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium ni

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TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It c

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TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It c

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PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab) Description The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off dev

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TP90H180PS 900V GaN FET in TO-220 (source tab) Description The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device. It combine

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650V GaN FET PQFN Series TPH3208L Series Not recommended for new designs Description The TPH3208L Series 650V, 110mΩ Gallium Nitride (GaN) FETs are

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TPD3215M—Discontinued PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) (m) 30 Features  High frequency operation  Free-wheeling diode not requir

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TP65H300G4LSG 650V SuperGaN™ GaN FET in PQFN (source tab) Preliminary Datasheet Description The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (Su

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TP65H150LSG 650V GaN FET PQFN Series Preliminary Description The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It com

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