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TPH3207WS - 650V GaN FET

Description

The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • W.

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Datasheet Details

Part number TPH3207WS
Manufacturer Transphorm
File Size 1.29 MB
Description 650V GaN FET
Datasheet download datasheet TPH3207WS Datasheet

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Full PDF Text Transcription

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650V GaN FET in TO-247 (source tab) TPH3207WS Not recommended for new designs—see TP65H035WS Description The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
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