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TPH3205WSB Datasheet 650v Gan Fet

Manufacturer: Transphorm

Overview: 650V GaN FET in TO-247 (source tab) TPH3205WSB Not remended for new designs—see.

Datasheet Details

Part number TPH3205WSB
Manufacturer Transphorm
File Size 1.25 MB
Description 650V GaN FET
Datasheet TPH3205WSB-Transphorm.pdf

General Description

The TPH3205WSB 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device.

It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Key Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.

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