TPH3205ESBET - 650V GaN FET

General Description

The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Key Features

JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoH.

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TPH3205ESBET 650v gan fet by Transphorm - Datasheet Preview

Datasheet Details

Part number	TPH3205ESBET
Manufacturer	Transphorm
File Size	1.31 MB
Description	650V GaN FET
Datasheet	TPH3205ESBET Datasheet

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Other Datasheets by Transphorm

Part Number	Description
TPH3205WS	600V Cascode GaN FET
TPH3205WSB	650V GaN FET
TPH3202L	600V GaN FET
TPH3202P	600V GaN FET
TPH3206L	650V GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab) Description The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.