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TPH3205WS - 600V Cascode GaN FET

General Description

The TPH3205WS 600V, 52mΩ gallium nitride (GaN) FET is a normally-off device.

Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices.

Key Features

  • Easy to drive.
  • compatible with standard gate drivers.
  • Low conduction and switching losses.
  • Low Qrr of 136nC.
  • no free-wheeling diode r.

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Datasheet Details

Part number TPH3205WS
Manufacturer Transphorm
File Size 0.98 MB
Description 600V Cascode GaN FET
Datasheet download datasheet TPH3205WS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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600V Cascode GaN FET in TO-247 (source tab) TPH3205WS Not recommended for new designs—see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. Transphorm is a leading-edge wide band gap supplier with world-class innovation and a portfolio of fully-qualified GaN transistors that enables increased performance and reduced overall system size and cost.