TPH3202P Overview
The TPH3202P Series 600V, 290mΩ Gallium Nitride (GaN) FETs are normally-off devices. They bine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
TPH3202P Key Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety