Datasheet Details
| Part number | TP65H035G4WS |
|---|---|
| Manufacturer | Transphorm |
| File Size | 1.32 MB |
| Description | SuperGaN FET |
| Datasheet |
 TP65H035G4WS Datasheet
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General Description
The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform.
It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
Key Features
- JEDEC qualified GaN technology.
- Dynamic RDS(on)eff production tested.
- Robust design, defined by.
- Wide gate safety margin.
- Transient over-voltage capability.
- Enhanced inrush current capability.
- Very low QRR.
- Reduced crossover loss Benefits.
- Enables AC-DC bridgeless totem-pole PFC designs.
- Increased power density.
- Reduced system size and weight.
- Overall lower system cost.
- Achieves increased efficiency in both har.