TP65H035G4WS Datasheet | Transphorm

650V SuperGaN™ FET in TO-247 (source tab) Description The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It bines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN™ platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Related Literature - AN0009: Remended External Circuitry for GaN FETs - AN0003: Printed Circuit Board Layout and Probing Ordering...