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TP65H035G4WS - 650V FET

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Renesas

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TP65H035G4WS 650V FET by Renesas - Datasheet Preview — Datasheet preview – TP65H035G4WS

Datasheet Details

Part number	TP65H035G4WS
Manufacturer	Renesas
File Size	1.21 MB
Description	650V FET
Datasheet	TP65H035G4WS Datasheet
Additional preview pages of the TP65H035G4WS datasheet.

TP65H035G4WS Product details

Description

The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Enhanced inrush current capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves increased efficiency in both har.

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Published: Jan 17, 2025 |