TP65H035WSQA - 650V GaN FET

General Description

The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device.

offering superior reliability and performance.

Key Features

JEDEC-qualified GaN technology.
Junction temperature rating of 175C.
Dynamic RDS(on) production tested.
Robu.

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TP65H035WSQA 650v gan fet by Transphorm - Datasheet Preview

Datasheet Details

Part number	TP65H035WSQA
Manufacturer	Transphorm
File Size	945.99 KB
Description	650V GaN FET
Datasheet	TP65H035WSQA Datasheet

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TP65H035WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab) Description The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.