TP65H035WSQA Datasheet | Transphorm

Description The TP65H035WSQA 650V, 35mΩ gallium nitride (Ga N) FET is a normally-off automotive (AEC-Q101) qualified device. It bines state-of-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. Transphorm Ga N offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature - AN0009: Remended External Circuitry for Ga N FETs - AN0003: Printed Circuit Board Layout and Probing - AN0010: Paralleling Ga N FETs Ordering Information Part Number Package TP65H035WSQA 3 lead TO-247 Package Configuration Source TP65H035WSQA TO-247 (top view) GS D Cascode Schematic Symbol February 1, 2018 tp65h035wsqa.0 Cascode Device Structure Features - JEDEC-qualified Ga N technology - Junction temperature rating of 175C - Dynamic RDS(on) production tested -...