TP65H035WSQA Description
The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
TP65H035WSQA Key Features
- JEDEC-qualified GaN technology
- Junction temperature rating of 175C
- Dynamic RDS(on) production tested