Renesas Electronics TP65H035G4QS
The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.| Part No. | TP65H035G4QS |
|---|---|
| Datasheet | TP65H035G4QS Download |
| Manufacturer |  Renesas Electronics |
| Description | 650V SuperGaN FET |
| Buy | Stock & Price |
DESCRIPTION
Related Literature● Recommended External Circuitry for GaN FETs
● Printed Circuit Board Layout and Probing
● Low cost driver solution Ordering Information Part Number TP65H035G4QS-TR Package Package Configuration 10x12mm TOLL Source * “-TR” suffix refers to tape and reel. Refer to AN0012 for details. TP65H035G4QS TOLL (bottom view) Pin 9 Pin 10 Pin 11
FEATURES
● JEDEC qualified GaN technology● Dynamic RDS(on)eff production tested
● Robust design, defined by — Wide gate safety margin — Transient over-voltage capability
● Enhanced inrush current capability
● Very low QRR
● Reduced crossover loss
● Kelvin source for low inductance gate return path Benefits
● Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost
● Achieves increased efficiency in both hard- and soft-switched circuits
● Easy to drive with commonly-used gate drivers
● GSD pin layout improves high speed design
● Pin-to-pin drop-in w...
