TP65H035G4QS
Overview
The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by - Wide gate safety margin - Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss
- Kelvin source for low inductance gate return path Benefits
- Enables AC-DC bridgeless totem-pole PFC designs - Increased power density - Reduced system size and weight - Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
