TP65H035WS
Overview
The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies-offering superior reliability and performance.
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by - Intrinsic lifetime tests - Wide gate safety margin - Transient over-vol
