TP65H035WS Overview
Description
The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies-offering superior reliability and performance.
Key Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-vol
