Datasheet Summary
650V GaN FET in TO-247 (source tab)
Description
The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature
- AN0009: Remended External Circuitry for GaN FETs
- AN0003: Printed Circuit Board Layout and Probing
- AN0010: Paralleling GaN FETs
Ordering Information
Part Number
Package
3 lead TO-247
Package Configuration
Source
TP65H035WS TO-247...
