TP65H030G4PWS Description
The TP65H030G4PWS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform. It bines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability. The Gen IV plus SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving...
TP65H030G4PWS Key Features
- Ultra-fast switching Gen IV plus GaN
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Zero reverse recovery charge
- Reduced crossover loss
- RoHS pliant and Halogen-free packaging