Renesas Electronics TP65H030G4PWS
The TP65H030G4PWS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability. The Gen IV plus SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.| Part No. | TP65H030G4PWS |
|---|---|
| Datasheet | TP65H030G4PWS Download |
| Manufacturer |  Renesas Electronics |
| Description | 650V GaN FET |
| Buy | Stock & Price |
DESCRIPTION
Benefits● Superior normally off architecture with D-mode GaN HEMT
● Compatible with standard silicon drivers
● Enhanced noise immunity with a 4V threshold voltage with no negative gate drive required
● Enables high-efficiency, high power density, and reliable power conversion
● Facilitates cost-effective GaN adoption reducing system size, weight, and costs Product/Schematic Diagrams
FEATURES
● Ultra-fast switching Gen IV plus GaN● JEDEC-qualified GaN technology
● Dynamic RDS(on)eff production tested
● Zero reverse recovery charge
● Reduced crossover loss
● RoHS compliant and Halogen-free packaging
APPLICATIONS
● AI datacenter and telecom power supplies● E-mobility charging
● PV inverter
● UPS
● BESS Specifications VDS (V) 650 VDSS(TR)(V) maximum 800 RDS(on) (mΩ) maximum [1] 41 QOSS (nC) typical 135 QG (nC) typical 24.5 1. Dynamic RDS(on) (see Figure 21 and Figure 22) TP65H030G4PWS TO-247 3L Cascode Schematic Symbol Cascode Device Structure R07DS1601EU0101 Rev.1.01 Jul 10, 2025 Page 1 © 2025 Renesas Electronics TP65H030G4PWS Datasheet Contents 1.
