Datasheet Summary
650V SuperGaN® GaN FET in TO-247 (source tab)
Description
The TP65H030G4PWS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform. It bines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability.
The Gen IV plus SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Benefits
- Superior normally off architecture with D-mode GaN HEMT
- patible with...