Datasheet4U Logo Datasheet4U.com

TP65H030G4PQS - 650V GaN FET

General Description

The TP65H030G4PQS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability.

Key Features

  • Ultra-fast switching Gen IV plus GaN.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Zero reverse recovery charge.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TP65H035G4QS 650V FET Transphorm
TP65H035G4WS SuperGaN FET Transphorm
TP65H035WS 650V Cascode GaN FET Transphorm
TP65H035WSQA 650V GaN FET Transphorm
TP65H050BS GaN FET Transphorm

Other Datasheets by Renesas

Part Number Description
TP65H030G4PRS 650V GaN FET
TP65H030G4PWS 650V GaN FET
TP65H035G4QS 650V SuperGaN FET
TP65H035G4WS 650V FET
TP65H035G4YS 650V SuperGaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TP65H030G4PQS 650V SuperGaN® GaN FET in TOLL (source tab) Datasheet Description The TP65H030G4PQS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability. The Gen IV plus SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.