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TP65H030G4PRS - 650V GaN FET

Description

The TP65H030G4PRS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability.

Features

  • Ultra-fast switching Gen IV plus GaN.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Zero reverse recovery charge.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging.

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Full PDF Text Transcription

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TP65H030G4PRS 650V SuperGaN® GaN FET in TOLT (source tab) Datasheet Description The TP65H030G4PRS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability. The Gen IV plus SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
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