Datasheet Details
| Part number | TP65H030G4PRS |
|---|---|
| Manufacturer | Renesas |
| File Size | 916.39 KB |
| Description | 650V GaN FET |
| Datasheet | TP65H030G4PRS-Renesas.pdf |
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Overview: TP65H030G4PRS 650V SuperGaN® GaN FET in TOLT (source tab) Datasheet.
| Part number | TP65H030G4PRS |
|---|---|
| Manufacturer | Renesas |
| File Size | 916.39 KB |
| Description | 650V GaN FET |
| Datasheet | TP65H030G4PRS-Renesas.pdf |
|
|
|
The TP65H030G4PRS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform.
It bines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability.
The Gen IV plus SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
| Part Number | Description |
|---|---|
| TP65H030G4PQS | 650V GaN FET |
| TP65H030G4PWS | 650V GaN FET |
| TP65H035G4QS | 650V SuperGaN FET |
| TP65H035G4WS | 650V FET |
| TP65H035G4YS | 650V SuperGaN FET |
| TP65H050G4BS | 650V SuperGaN FET |
| TP65H050G4QS | 650V FET |
| TP65H050G4WS | 650V FET |
| TP65H050G4YS | 650V FET |
| TP65H070G4LSG | 650V GaN FET |