TP65H030G4PRS - 650V GaN FET

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Renesas

Datasheet Details

Part number	TP65H030G4PRS
Manufacturer	Renesas
File Size	916.39 KB
Description	650V GaN FET
Datasheet	TP65H030G4PRS Datasheet
Additional preview pages of the TP65H030G4PRS datasheet.

TP65H030G4PRS Product details

Description

The TP65H030G4PRS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability.

Features

Ultra-fast switching Gen IV plus GaN.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Zero reverse recovery charge.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging.

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Published: Oct 28, 2025 |