Renesas Electronics TP65H030G4PRS
The TP65H030G4PRS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability. The Gen IV plus SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.| Part No. | TP65H030G4PRS |
|---|---|
| Datasheet | TP65H030G4PRS Download |
| Manufacturer |  Renesas Electronics |
| Description | 650V GaN FET |
| Buy | Stock & Price |
DESCRIPTION
Benefits● Superior normally off architecture with D-mode GaN HEMT
● Compatible with standard silicon drivers
● Enhanced noise immunity with a 4V threshold voltage with no negative gate drive required
● Enables high-efficiency, high power density, and reliable power conversion
● Facilitates cost-effective GaN adoption reducing system size, weight, and costs Product and Schematic Diagrams
FEATURES
● Ultra-fast switching Gen IV plus GaN● JEDEC-qualified GaN technology
● Dynamic RDS(on)eff production tested
● Zero reverse recovery charge
● Reduced crossover loss
● RoHS compliant and Halogen-free packaging
APPLICATIONS
● AI datacenter and telecom power supplies● E-mobility charging
● PV inverter
● UPS
● BESS Specifications VDS (V) 650 VDSS(TR)(V) maximum 800 RDS(on) (mΩ) maximum [1] 41 QOSS (nC) typical 135 QG (nC) typical 24.5 1. Dynamic RDS(on) (see Figure 20 and Figure 21) TP65H030G4PRS TOLT Cascode Schematic Symbol Cascode Device Structure R07DS1602EU0102 Rev.1.02 Oct 23, 2025 Page 1 © 2025 Renesas Electronics TP65H030G4PRS Datasheet Contents 1.
