Datasheet4U.com

TP65H035G4QS - 650V FET

Product Overview

📥 Download Datasheet

TP65H035G4QS 650V FET by Transphorm - Datasheet Preview — Datasheet preview – TP65H035G4QS

Datasheet Details

Part number	TP65H035G4QS
Manufacturer	Transphorm
File Size	1.12 MB
Description	650V FET
Datasheet	TP65H035G4QS Datasheet
Additional preview pages of the TP65H035G4QS datasheet.

Product details

Description

The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform.

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Enhanced inrush current capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves.

📁 Similar Datasheet

TP65H035G4QS - 650V SuperGaN FET (Renesas)
TP65H035G4WS - 650V FET (Renesas)
TP65H035G4YS - 650V SuperGaN FET (Renesas)
TP65H030G4PQS - 650V GaN FET (Renesas)
TP65H030G4PRS - 650V GaN FET (Renesas)
TP65H030G4PWS - 650V GaN FET (Renesas)
TP65H050G4BS - 650V SuperGaN FET (Renesas)
TP65H050G4QS - 650V FET (Renesas)

Other Datasheets by Transphorm

TP65H035G4WS - SuperGaN FET
TP65H035WS - 650V Cascode GaN FET
TP65H035WSQA - 650V GaN FET
TP65H050BS - GaN FET
TP65H050WS - 650V GaN FET
TP65H070L - 650V GaN FET

Published: Jan 11, 2025 |