| Part Number | TP65H035G4QS Datasheet |
|---|---|
| Manufacturer | Renesas |
| Overview |
The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET .
* JEDEC qualified GaN technology * Dynamic RDS(on)eff production tested * Robust design, defined by * Wide gate safety margin * Transient over-voltage capability * Enhanced inrush current capability * Very low QRR * Reduced crossover loss * Kelvin source for low inductance gate return path Benefits . |
TP65H035G4QS Datasheet and Specifications PDF
The TP65H035G4QS is a 650V SuperGaN FET.
| Part Number | TP65H035G4QS Datasheet |
|---|---|
| Description | 650V FET |
| Manufacturer | Transphorm |
| Overview |
The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSF.
* JEDEC qualified GaN technology * Dynamic RDS(on)eff production tested * Robust design, defined by * Wide gate safety margin * Transient over-voltage capability * Enhanced inrush current capability * Very low QRR * Reduced crossover loss Benefits * Enables AC-DC bridgeless totem-pole PFC designs * . |