Datasheet4U.com

TP65H035G4YS - 650V SuperGaN FET

Product Overview

Renesas

📥 Download Datasheet

TP65H035G4YS 650V SuperGaN FET by Renesas - Datasheet Preview — Datasheet preview – TP65H035G4YS

Datasheet Details

Part number	TP65H035G4YS
Manufacturer	Renesas
File Size	956.32 KB
Description	650V SuperGaN FET
Datasheet	TP65H035G4YS Datasheet
Additional preview pages of the TP65H035G4YS datasheet.

Product details

Description

The TP65H035G4YS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Enhanced inrush current capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves increased efficiency in both har.

📁 Similar Datasheet

TP65H035G4QS - 650V FET (Transphorm)
TP65H035G4WS - SuperGaN FET (Transphorm)
TP65H035WS - 650V Cascode GaN FET (Transphorm)
TP65H035WSQA - 650V GaN FET (Transphorm)
TP65H050BS - GaN FET (Transphorm)
TP65H050WS - 650V GaN FET (Transphorm)
TP65H070L - 650V GaN FET (Transphorm)
TP65H070LDG - 650V GaN FET (Transphorm)

Other Datasheets by Renesas

TP65H035G4QS - 650V SuperGaN FET
TP65H035G4WS - 650V FET
TP65H030G4PQS - 650V GaN FET
TP65H030G4PRS - 650V GaN FET
TP65H030G4PWS - 650V GaN FET
TP65H050G4BS - 650V SuperGaN FET

Published: Jan 30, 2025 |