TP65H035G4YS Overview
Description
The TP65H035G4YS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
Key Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss Benefits
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
