TP65H070L Datasheet | Transphorm

Description The TP65H070L 650V, 72mΩ Gallium Nitride (Ga N) FET are normally-off devices. It bines state-of-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. Transphorm Ga N offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature - AN0009: Remended External Circuitry for Ga N FETs - AN0003: Printed Circuit Board Layout and Probing - AN0010: Paralleling Ga N FETs Ordering Information Part Number Package TP65H070LDG TP65H070LSG 8 x 8mm PQFN 8 x 8mm PQFN Package Configuration Drain Source TP65H070LDG 8x8 PQFN (bottom view) TP65H070LSG 8x8 PQFN (bottom view) Features - JEDEC qualified Ga N technology - Dynamic RDS(on)eff production tested - Robust design, defined by - Intrinsic lifetime tests - Wide gate safety margin - Transient over-voltage capability - Very low QRR - Reduced crossover loss - Ro HS pliant and Halogen-free packaging Benefits - Improves efficiency/operation frequencies over Si - Enables AC-DC bridgeless totem-pole PFC designs - Increased power density - Reduced system size and weight - Overall lower system cost - Easy to drive with monly-used gate drivers - GSD pin layout improves high speed design Applications...