TP65H070G4LSG Overview
Key Specifications
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
The TP65H070G4LSG 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-ofthe-art high voltage GaN HEMT and low voltage silicon MOSFET technologies-offering superior reliability and performance.
Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS compliant and Halogen-free packaging Benefits
- Achieves increased efficiency in both hard- and soft-switched circuits
