Renesas Electronics TP65H070G4LSGB
The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.| Part No. | TP65H070G4LSGB |
|---|---|
| Datasheet | TP65H070G4LSGB Download |
| Manufacturer |  Renesas Electronics |
| Description | 650V SuperGaN GaN FET |
| Buy | Stock & Price |
DESCRIPTION
The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge Related Literature● Recommended External Circuitry for GaN FETs
● Printed Circuit Board Layout and Probing
● Recommendations for Vapor Phase Reflow
● Paralleling GaN FETs
● PQFN Tape and Reel Information
● Low cost driver solution Ordering Information Part Number Package TP65H070G4LSGB-TR 8x8 PQFN Package Configuration Source * “-TR” suffix refers to tape and reel. Refer to AN0012 for details. TP65H070G4LSGB PQFN (Bottom view) Pin 1 Pin 9 Pin 8 Pin 4 Pin 5 D G KS S Cascode Schematic Symbol Cascode Device Structure
FEATURES
● Gen IV technology● JEDEC-qualified GaN technology
● Dynamic RDS(on)eff production tested
● Robust design, defined by — Wide gate safety margin — Transient over-voltage capability
● Very low QRR
● Reduced crossover los...
