TP65H070G4LSGB Datasheet | Renesas

Specifications in this document are tentative and subject to change 650V Super Ga N® Ga N FET in PQFN (source tab) Description The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (Ga N) FET is a normally-off device. It bines state-of-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge Related Literature - Remended External Circuitry for Ga N FETs - Printed Circuit Board Layout and Probing - Remendations for Vapor Phase Reflow - Paralleling Ga N FETs - PQFN Tape and Reel Information - Low cost driver solution Ordering Information Part Number Package TP65H070G4LSGB-TR 8x8 PQFN Package Configuration Source - “-TR” suffix refers to tape and reel. Refer to AN0012 for details. TP65H070G4LSGB PQFN (Bottom view) Pin 1 Pin 9 Pin 8 Pin 4 Pin 5 G KS S Cascode Schematic Symbol Cascode Device Structure Features - Gen IV technology - JEDEC-qualified Ga N...