Renesas Electronics TP65H070G4RS
The TP65H070G4RS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-ofthe-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.| Part No. | TP65H070G4RS |
|---|---|
| Datasheet | TP65H070G4RS Download |
| Manufacturer |  Renesas Electronics |
| Description | 650V SuperGaN GaN FET |
| Buy | Stock & Price |
DESCRIPTION
The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge Related Literature● Recommended External Circuitry for GaN FETs
● Printed Circuit Board Layout and Probing
● Paralleling GaN FETs
● Low cost driver solution Ordering Information Part Number TP65H070G4RS-TR Package TOLT Package Configuration Source * “-TR” suffix refers to tape and reel. Refer to AN0012 for details. TP65H070G4RS TOLT (Top view)
FEATURES
● Gen IV technology● JEDEC-qualified GaN technology
● Dynamic RDS(on)eff production tested
● Robust design, defined by — Wide gate safety margin — Transient over-voltage capability
● Very low QRR
● Reduced crossover loss
● RoHS compliant and Halogen-free packaging
● Top-side cooling Benefits
● Achieves increased efficiency in both hard- and soft-switched circuits — Increased power density —...
