TP65H070G4RS Datasheet | Renesas

Specifications in this document are tentative and subject to change 650V Super Ga N® Ga N FET in PQFN (source tab) Description The TP65H070G4RS 650V, 72mΩ Gallium Nitride (Ga N) FET is a normally-off device. It bines state-ofthe-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge Related Literature - Remended External Circuitry for Ga N FETs - Printed Circuit Board Layout and Probing - Paralleling Ga N FETs - Low cost driver solution Ordering Information Part Number TP65H070G4RS-TR Package TOLT Package Configuration Source - “-TR” suffix refers to tape and reel. Refer to AN0012 for details. TP65H070G4RS TOLT (Top view) Features - Gen IV technology - JEDEC-qualified Ga N technology - Dynamic RDS(on)eff production tested - Robust design, defined by - Wide gate safety margin - Transient over-voltage capability - Very low QRR - Reduced crossover loss - Ro HS pliant and Halogen-free packaging - Top-side cooling Benefits - Achieves increased efficiency in both hard- and soft-switched circuits - Increased power...