TP65H070LSG Overview
The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
TP65H070LSG Key Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS pliant and Halogen-free packaging
- Improves efficiency/operation frequencies over Si
