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TPH3206PD Datasheet 600v Gan Fet

Manufacturer: Transphorm

Overview: 600V GaN FET in TO-220 (drain tab) TPH3206PD Not remended for new designs—see.

Datasheet Details

Part number TPH3206PD
Manufacturer Transphorm
File Size 1.32 MB
Description 600V GaN FET
Datasheet TPH3206PD-Transphorm.pdf

General Description

The TPH3206PD 600V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.

It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Key Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • W.

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