TPH3206PD Datasheet | Transphorm

600V GaN FET in TO-220 (drain tab) Not remended for new designs- see TPH3206PSB Description The TPH3206PD 600V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature - AN0009: Remended External Circuitry for GaN FETs - AN0003: Printed Circuit Board Layout and Probing - AN0010: Paralleling GaN FETs Ordering Information Part Number Package 3 lead...