TPH3206PSB - 650V GaN FET

General Description

The TPH3206PSB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Key Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over.

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TPH3206PSB 650v gan fet by Transphorm - Datasheet Preview

Datasheet Details

Part number	TPH3206PSB
Manufacturer	Transphorm
File Size	1.36 MB
Description	650V GaN FET
Datasheet	TPH3206PSB Datasheet

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Other Datasheets by Transphorm

Part Number	Description
TPH3206PS	600V Cascode GaN FET
TPH3206PD	600V GaN FET
TPH3206L	650V GaN FET
TPH3202L	600V GaN FET
TPH3202P	600V GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPH3206PSB 650V GaN FET in TO-220 (source tab) Description The TPH3206PSB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TPH3206PSB 3 lead TO-220 Package Configuration Source TPH3206PSB TO-220 (top view) S GS D Cascode Schematic Symbol November 22, 2017 tph3206p.