Datasheet4U Logo Datasheet4U.com

TPH3208P - 650V GaN FET

Description

The TPH3208P Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices.

offering superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust de.

📥 Download Datasheet

Datasheet preview – TPH3208P

Datasheet Details

Part number TPH3208P
Manufacturer Transphorm
File Size 1.36 MB
Description 650V GaN FET
Datasheet download datasheet TPH3208P Datasheet
Additional preview pages of the TPH3208P datasheet.

📁 Similar Datasheet

  • TPH3300CNH - Silicon N-channel MOSFET (Toshiba)
  • TPH37.5A - Current Transducers (Topstek)
  • TPH37.5A-LTC - Current Transducers (Topstek)
  • TPH3R003PL - Silicon N-channel MOSFET (Toshiba)
  • TPH3R203NL - Silicon N-channel MOSFET (Toshiba)
  • TPH3R506PL - Silicon N-channel MOSFET (Toshiba)
  • TPH3R704PL - Silicon N-channel MOSFET (Toshiba)
  • TPH3R70APL - Silicon N-channel MOSFET (Toshiba)
  • TPH0303DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
  • TPH0305DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
Other Datasheets by Transphorm

Full PDF Text Transcription

Click to expand full text
TPH3208P Series 650V GaN FET TO-220 Series Description The TPH3208P Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Published: |