TPH3208PS - 650V GaN FET

Product Overview

Datasheet Details

Part number	TPH3208PS
Manufacturer	Transphorm
File Size	1.22 MB
Description	650V GaN FET
Datasheet	TPH3208PS Datasheet
Additional preview pages of the TPH3208PS datasheet.

Product details

Description

The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device. offering superior reliability and performance. AN0009: Recommended External Circuitry for GaN FETs AN0003: Printed Circuit Board Layout and Probin

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient.

📁 Similar Datasheet

TPH3300CNH - Silicon N-channel MOSFET (Toshiba)
TPH37.5A - Current Transducers (Topstek)
TPH37.5A-LTC - Current Transducers (Topstek)
TPH3R003PL - Silicon N-channel MOSFET (Toshiba)
TPH3R203NL - Silicon N-channel MOSFET (Toshiba)
TPH3R506PL - Silicon N-channel MOSFET (Toshiba)
TPH3R704PL - Silicon N-channel MOSFET (Toshiba)
TPH3R70APL - Silicon N-channel MOSFET (Toshiba)

Other Datasheets by Transphorm

TPH3208P - 650V GaN FET
TPH3208L - 650V GaN FET
TPH3208LDG - 650V GaN FET
TPH3208LSG - 650V GaN FET
TPH3202L - 600V GaN FET
TPH3202P - 600V GaN FET

Published: Apr 29, 2019 |