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TPH3208PS - 650V GaN FET

Description

The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • Wide gate safety margin.
  • Transient.

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Datasheet preview – TPH3208PS

Datasheet Details

Part number TPH3208PS
Manufacturer Transphorm
File Size 1.22 MB
Description 650V GaN FET
Datasheet download datasheet TPH3208PS Datasheet
Additional preview pages of the TPH3208PS datasheet.

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Full PDF Text Transcription

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TPH3208PS 650V GaN FET TO-220 Series Description The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Product Series and Ordering Information Part Number Package Package Configuration TPH3208PS 3 lead TO-220 Source TPH3208PS TO-220 (top view) S GS D Cascode Schematic Symbol March 27, 2018 tph3208p.
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