TPH3208LDG Overview
The TPH3208L Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They bine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
TPH3208LDG Key Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS pliant and Halogen-free packaging
- Enables AC-DC bridgeless totem-pole PFC designs