TPH3208LDG Datasheet | Transphorm

650V GaN FET PQFN Series TPH3208L Series Not remended for new designs Description The TPH3208L Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They bine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature - AN0009: Remended External Circuitry for GaN FETs - AN0003: Printed Circuit Board Layout and Probing Product Series and Ordering Information Part Number- Package Package Configuration 8 x 8mm...