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TPH3208L - 650V GaN FET

Description

The TPH3208L Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices.

offering superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.

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Datasheet preview – TPH3208L

Datasheet Details

Part number TPH3208L
Manufacturer Transphorm
File Size 1.73 MB
Description 650V GaN FET
Datasheet download datasheet TPH3208L Datasheet
Additional preview pages of the TPH3208L datasheet.

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Full PDF Text Transcription

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650V GaN FET PQFN Series TPH3208L Series Not recommended for new designs Description The TPH3208L Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
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