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T1G4005528-FS Datasheet, TriQuint Semiconductor

T1G4005528-FS Datasheet, TriQuint Semiconductor

T1G4005528-FS

datasheet Download (Size : 2.38MB)

T1G4005528-FS Datasheet

T1G4005528-FS transistor equivalent, gan rf power transistor.

T1G4005528-FS

datasheet Download (Size : 2.38MB)

T1G4005528-FS Datasheet

Features and benefits


* Frequency: DC to 3.5 GHz
* Linear Gain: >15 dB at 3.5 GHz
* Operating Voltage: 28 V
* Output Power (P3dB): 55 W at 3.5 GHz
* Lead-free and RoHS.

Application


* Military radar
* Civilian radar
* Professional and military radio communications
* Test instrument.

Description

The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25 µm production process, which features advanced field plate techniques to optimize power and .

Image gallery

T1G4005528-FS Page 1 T1G4005528-FS Page 2 T1G4005528-FS Page 3

TAGS

T1G4005528-FS
GaN
Power
Transistor
TriQuint Semiconductor

Manufacturer


TriQuint Semiconductor

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