T2G6003028-FL Datasheet GaN RF Power Transistor

Manufacturer: TriQuint Semiconductor

T2G6003028-FL gan rf power transistor by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	T2G6003028-FL
Manufacturer	TriQuint Semiconductor
File Size	0.99 MB
Description	GaN RF Power Transistor
Datasheet	T2G6003028-FL Datasheet

General Description

The TriQuint T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.

The device is constructed with TriQuint’s proven TQGaN25 process, which

Overview

T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers •.

Key Features

Frequency: DC to 6 GHz.
Output Power (P3dB): 25 W at 5.6 GHz.
Linear Gain: >14 dB at 5.6 GHz.
Operating Voltage: 28 V.
Low thermal resistance package Functional Block Diagram General.

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