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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers
Product Features
• Frequency: DC to 6 GHz • Output Power (P3dB): 42.7 W at 3 GHz • Linear Gain: >14 dB at 3 GHz • Operating Voltage: 28 V • Low thermal resistance package
Functional Block Diagram
General Description
The Qorvo T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with Qorvo’s proven QGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
T2G6003028-FL Datasheet
