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T2G6003028-FL Datasheet GaN RF Power Transistor

Manufacturer: Qorvo

General Description

The Qorvo T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.

The device is constructed with Qorvo’s proven QGaN25 process, which

Overview

T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers •.

Key Features

  • Frequency: DC to 6 GHz.
  • Output Power (P3dB): 42.7 W at 3 GHz.
  • Linear Gain: >14 dB at 3 GHz.
  • Operating Voltage: 28 V.
  • Low thermal resistance package Functional Block Diagram General.