T2G6003028-FL
T2G6003028-FL is GaN RF Power Transistor manufactured by qorvo.
30W, 28V DC
- 6 GHz, GaN RF Power Transistor
Applications
- Military radar
- Civilian radar
- Professional and military radio munications
- Test instrumentation
- Wideband or narrowband amplifiers
- Jammers
Product Features
- Frequency: DC to 6 GHz
- Output Power (P3dB): 42.7 W at 3 GHz
- Linear Gain: >14 dB at 3 GHz
- Operating Voltage: 28 V
- Low thermal resistance package
Functional Block Diagram
General Description
The Qorvo T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with Qorvo’s proven QGaN25 process, which Features advanced field plate techniques to optimize power and efficiency at high drain...
