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T2G6003028-FL

Manufacturer: TriQuint Semiconductor

T2G6003028-FL datasheet by TriQuint Semiconductor.

T2G6003028-FL datasheet preview

T2G6003028-FL Datasheet Details

Part number T2G6003028-FL
Datasheet T2G6003028-FL-TriQuintSemiconductor.pdf
File Size 0.99 MB
Manufacturer TriQuint Semiconductor
Description GaN RF Power Transistor
T2G6003028-FL page 2 T2G6003028-FL page 3

T2G6003028-FL Overview

The TriQuint T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which.

T2G6003028-FL Key Features

  • Frequency: DC to 6 GHz
  • Output Power (P3dB): 25 W at 5.6 GHz
  • Linear Gain: >14 dB at 5.6 GHz
  • Operating Voltage: 28 V
  • Low thermal resistance package

T2G6003028-FL from other manufacturers

View T2G6003028-FL datasheet index

Brand Logo Part Number Description Other Manufacturers
qorvo Logo T2G6003028-FL GaN RF Power Transistor qorvo
TriQuint Semiconductor logo - Manufacturer

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T2G6003028-FL Distributor

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