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T2G6003028-FL - GaN RF Power Transistor

Description

The TriQuint T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.

Features

  • Frequency: DC to 6 GHz.
  • Output Power (P3dB): 25 W at 5.6 GHz.
  • Linear Gain: >14 dB at 5.6 GHz.
  • Operating Voltage: 28 V.
  • Low thermal resistance package Functional Block Diagram General.

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Datasheet Details

Part number T2G6003028-FL
Manufacturer TriQuint Semiconductor
File Size 0.99 MB
Description GaN RF Power Transistor
Datasheet download datasheet T2G6003028-FL Datasheet
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Full PDF Text Transcription

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T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers Product Features • Frequency: DC to 6 GHz • Output Power (P3dB): 25 W at 5.6 GHz • Linear Gain: >14 dB at 5.6 GHz • Operating Voltage: 28 V • Low thermal resistance package Functional Block Diagram General Description The TriQuint T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
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