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TGA2611-SM Datasheet Gan Lna

Manufacturer: TriQuint Semiconductor

Overview: Applications  mercial and Military Radar  munications TGA2611-SM 2-6 GHz GaN LNA.

General Description

TriQuint’s TGA2611-SM is a packaged broadband Low Noise Amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process.

The TGA2611-SM operates from 2 to 6 GHz and typically provides >18 dBm P1dB, >22 dB of small signal gain and 30 dBm of OTOI with 1.0 dB NF.

In addition to the high overall electrical performance, this GaN amplifier also provides a high level of input power robustness which allows more flexibility in designing the receive chain circuit protection.

Key Features

  • Frequency Range: 2.
  • 6 GHz.
  • NF: 1.0 dB.
  • OTOI: 30 dBm at Pout/tone = 18 dBm.
  • Small Signal Gain: 22 dB.
  • Return Loss: >10 dB.
  • P1dB: 18 dBm, PSAT = 26 dBm at PIN = 10 dBm.
  • Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V.
  • Package Dimensions: 4.0 x 4.0 x 0.85 mm Functional Block Diagram General.

More Datasheets from TriQuint Semiconductor

Part Number Description
TGA2611 GaN LNA
TGA2612 GaN LNA
TGA2612-SM GaN LNA
TGA2613-SM S-Band High Linearity LNA
TGA2614-SM S-Band High Gain LNA
TGA2618 GaAs LNA
TGA2618-SM GaAs LNA
TGA2600 X-band Ultra Low Noise Amplifier
TGA2601-SM 800 - 3000 MHz High IP3 Dual pHEMT
TGA2602-SM 800 - 3000MHz High IP3 Dual LNA

TGA2611-SM Distributor