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ASICs
Application Note 644: Mar 17, 2000
QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz
1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137
Abstract A two-stage 1.9GHz monolithic low-noise amplifier (LNA) with a measured noise figure of 2.3dB and an associated gain of 15dB was fabricated in a standard silicon bipolar transistor array. It dissipates 5.2mW from a 3V supply including the bias circuitry. Input return loss and isolation are -9dB and -20dB, respectively. I.
AN644 Datasheet
